180 nm technology is assumed since it is the latest in use.

Early effect is not considered.

Early effect is not considered.

__MATLAB code__

%n-channel enhancement mode MOSFET output characteristics

clear all;

%kn=un*cox = 100 microA/Volts

kn=1e-4;

%Let W/L= 2

W=360*(10^(-9));

L=180*(10^(-9));

beta=kn*W/L;

%Vth is the threshold voltage

Vth=1;

%Sweep drain to source voltge from 0 to 10V

vds=0:0.5:10;

%Ask the user to enter gate to source voltage

vgs=input('ENTER THE Vgs in volts');

%Estimate length of the array

m=length(vds);

for i=1:m

if vgs < Vth

current(1,i)=0;

elseif vds(i) >= (vgs - Vth)

current(1,i)=0.5* beta * (vgs - Vth)^2;

elseif vds(i) < (vgs - Vth)

current(1,i)= beta*((vgs-Vth)*vds(i) - 0.5*(vds(i)^2));

end

end

plot(vds,current(1,:),'b')

xlabel('Vds, V')

ylabel('Drain Current,A')

title('I-V Characteristics of a MOSFET')

__OUTPUT CHARACTERISTICS__

Vgs=4V

Dear Sir I ask you to help me in my search for: modeling of static and dynamic characteristics TO MOSFET WITH MATLAB CODE

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